SI3410DV-T1-GE3
| Part No | SI3410DV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 8A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22986
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.728 | |
| 10 | 0.7134 | |
| 100 | 0.6916 | |
| 1000 | 0.6698 | |
| 10000 | 0.6406 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 1.1 mm |
| Weight | 19.986414 mg |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Packaging | Digi-Reel® |
| Rise Time | 14 ns |
| REACH SVHC | Unknown |
| Rds On Max | 19.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 3 V |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 1.295 nF |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Max Power Dissipation | 2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 16 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
