SI4431CDY-T1-GE3
| Part No | SI4431CDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 9A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
37485
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6789 | |
| 10 | 0.6653 | |
| 100 | 0.645 | |
| 1000 | 0.6246 | |
| 10000 | 0.5974 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 5 mm |
| Weight | 186.993455 mg |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 89 ns |
| REACH SVHC | Unknown |
| Rds On Max | 32 mΩ |
| Resistance | 32 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 1.006 nF |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -2.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Max Power Dissipation | 4.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 26 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | -7 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | -30 V |
