SI7852ADP-T1-GE3
| Part No | SI7852ADP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 80V 30A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18888
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.268 | |
| 10 | 2.2226 | |
| 100 | 2.1546 | |
| 1000 | 2.0866 | |
| 10000 | 1.9958 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Rise Time | 9 ns |
| REACH SVHC | Unknown |
| Rds On Max | 17 mΩ |
| Resistance | 17 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Number of Pins | 8 |
| Input Capacitance | 1.825 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | 4.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 14 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 12 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 80 V |
| Manufacturer Package Identifier | S17-0173_SINGLE |
| Drain to Source Breakdown Voltage | 80 V |
