SIRA02DP-T1-GE3
| Part No | SIRA02DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 50A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15976
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.462 | |
| 10 | 1.4328 | |
| 100 | 1.3889 | |
| 1000 | 1.345 | |
| 10000 | 1.2866 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Width | 5.26 mm |
| Height | 1.12 mm |
| Length | 6.25 mm |
| Weight | 506.605978 mg |
| Fall Time | 16 ns |
| REACH SVHC | Unknown |
| Rds On Max | 2 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 1.1 V |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 6.15 nF |
| Power Dissipation | 5 W |
| Threshold Voltage | 1.1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 31 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42 ns |
| Element Configuration | Single |
| Max Power Dissipation | 50 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
