IPB017N10N5ATMA1
| Part No | IPB017N10N5ATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 180A TO263-7 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17006
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.2608 | |
| 10 | 6.1356 | |
| 100 | 5.9478 | |
| 1000 | 5.7599 | |
| 10000 | 5.5095 |
Specifications
| RoHS | Compliant |
|---|---|
| Mount | Surface Mount |
| Height | 4.5 mm |
| Weight | 1.59999 g |
| Fall Time | 27 ns |
| Lead Free | Contains Lead |
| Packaging | Tape & Reel |
| Rise Time | 23 ns |
| Rds On Max | 1.7 mΩ |
| Schedule B | 8541290080 |
| Case/Package | TO-263-7 |
| Halogen Free | Halogen Free |
| Number of Pins | 7 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 1000 |
| Input Capacitance | 12 nF |
| Power Dissipation | 375 W |
| Number of Channels | 1 |
| Turn-On Delay Time | 33 ns |
| On-State Resistance | 1.7 mΩ |
| Turn-Off Delay Time | 80 ns |
| Element Configuration | Single |
| Max Power Dissipation | 375 W |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 1.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 180 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
